2007. 8. 10 1/2 semiconductor technical data KDV143EL silicon epitaxial pin type diode revision no : 2 for antenna switches in mobile applications. features low operation current. small package . maximum rating (ta=25 ) 1. anode 2. cathcde elp-2 b f f a i j dim millimeters a b c c d d e 2 1 2 1 e h h typ 0.36 typ 0.1 max 0.3 g j i g g 0.6 0.05 + _ 0.3 0.05 + _ 0.2 0.05 + _ 0.25 0.05 + _ 0.025 0.02 + _ 0.18 0.05 + _ 0.28 0.05 + _ electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 0.1 a forward voltage v f i f = 2ma - - 0.9 v total capacitance c t v r =1v, f =1mhz - - 0.43 pf series resistance r s i f =2ma, f =100mhz - - 1.8 esd-capability * - c =200pf, r =0 , both forward and reverse direction 1 pulse 100 - - * failure cirterion : i r >100na at v r =30v.
2007. 8. 10 2/2 KDV143EL revision no : 2 ta=25 c ta=50 c ta=75 c ta=25 c ta=50 c ta=75 c reverse current i r (a) reverse voltage v r (v) i r - v r i f - v f forward voltage v f (v) forward current i f (a) 0 0.2 0.6 0.4 0.8 1.0 10 -8 10 -14 10 -10 10 -12 10 -2 10 -4 10 -6 10 -8 10 -10 10 -12 10 -9 10 -11 10 -13 02040 10 30 50 r s - i f forward current i f (ma) series resistance r s ( ? ) 0.1 0.1 10.0 10.0 100.0 1.0 1.0 f=100mhz c t - v r reverse voltage v r (v) total capacitance c t (pf) 0.1 10.0 1.0 1.0 f=1mhz
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